IRF5305SPBF Infineon Technologies MOSFET 1 P-CH -55V HEXFET 60mOhms 42nC

Mfr. #:

IRF5305SPBF

Manufacturer: Infineon

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Transistor Polarity: P-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 55 V

Id - Continuous Drain Current: 31 A

Rds On - Drain-Source Resistance: 60 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Qg - Gate Charge: 42 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 175 C

Pd - Power Dissipation: 110 W

Channel Mode: Enhancement

Packaging: Tube

Brand: Infineon Technologies

Configuration: Single

Fall Time: 63 ns

Height: 2.3 mm

Length: 6.5 mm

Product Type: MOSFET

Rise Time: 66 ns

factory pack quantiy: 1000

Subcategory: MOSFETs

Transistor Type: 1 P-Channel

Type: HEXFET Power MOSFET

Typical Turn-Off Delay Time: 39 ns

Typical Turn-On Delay Time: 14 ns

Width: 6.22 mm

Part # Aliases: SP001563340

Unit Weight: 0.011640 oz